Samsung Electronics unveiled a roadmap for next-generation 3D memory and storage technologies at Future of Memory and Storage (FMS) 2026 in Santa Clara, California, highlighting solutions aimed at improving the performance and energy efficiency of artificial intelligence infrastructure. The company presented concept models for zHBM and zNAND-O. Samsung said zHBM would vertically integrate high-bandwidth memory above AI accelerators, reducing the distance data must travel and potentially improving bandwidth, power efficiency and thermal performance. The company also introduced zNAND-O, a high-performance NAND solution designed for data-intensive edge AI applications. Samsung also announced V10 BV-NAND, a new Bonding V-NAND architecture with more than 400 layers. The company said wafer-bonding technology increases memory density by about 58% compared with its previous-generation V9 NAND, while also improving read, write and input-output performance. The company displayed additional products and technologies, including HBM4E, HBM5, LPDDR5X-PIM and enterprise storage solutions PM1763 and BM1773. Samsung said its roadmap reflects an effort to provide integrated memory, foundry and advanced-packaging services for AI data centers and other high-performance computing applications. Post navigation NVIDIA Joins National AI Hub Program Samsung Unveils New Foldables and Watches