Samsung Electronics and Broadcom have signed a memorandum of understanding to expand their collaboration across memory and foundry technologies, targeting the growing demand for artificial intelligence infrastructure. The companies said the collaboration could exceed $200 billion over five years through 2030. The agreement was announced at the AI Summit in San Francisco, attended by executives from both companies and representatives of the South Korean government. Samsung and Broadcom plan to work on memory solutions, including high-bandwidth memory for Broadcom’s next-generation AI accelerators. The companies will also collaborate on Samsung’s 2-nanometer and smaller process technologies for Broadcom products, including wireless broadband communications solutions. Their plans include advanced packaging based on Samsung’s 2nm process, using 2.3D and 2.5D integration to support higher-performance and more power-efficient AI and networking chips. Samsung Vice Chairman and CEO Young Hyun Jun said the expanded partnership would address demand for integrated memory, logic and packaging technologies. Broadcom Semiconductor Solutions Group President Charlie Kawwas said combining the companies’ semiconductor capabilities would support the development of future AI infrastructure. Post navigation Hyundai Maps Out Physical AI Future AppleCare One Expands to Australia